MOSFET optimization in deep submicron technology for charge amplifiers
نویسندگان
چکیده
منابع مشابه
Abstract--The optimization of the input MOSFET for charge amplifiers in deep submicron technologies is discussed. After a review of the traditional approach, the impact of prop-
-The optimization of the input MOSFET for charge amplifiers in deep submicron technologies is discussed. After a review of the traditional approach, the impact of properly modeling the equivalent series noise and gate capacitance of the MOSFET is presented. It is shown that the minimum channel length and the maximum available power are not always the best choice in terms of resolution. Also, in...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 2005
ISSN: 0018-9499
DOI: 10.1109/tns.2005.862938